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Subnanosecond flash memory enabled by 2D-enhanced hot-carrier injection

MainIn light of the accelerated advancement of artificial intelligence, there is an urgent requirement for non-volatile data memory technology with a sub-1-ns speed to overcome the bottleneck of computing energy efficiency1,11,12. The fastest static random-access memory (SRAM) can achieve sub-1-ns speed, but its stored data are volatile and its has poor energy efficiency and storage density. Although the mainstream non-volatile flash memory offers large non-volatile storage capacity and low manu...

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