Researchers from Shanghai-based Fudan University, who have developed a picosecond-level flash memory device, work in their lab. [Photo by Gao Erqiang/chinadaily.com.cn]Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented program speed of 400 picoseconds, equivalent to operating 25 billion times per second, shattering the existing speed limits in information storage.It became the fastest semiconductor charge storage device cu...