Harnessing orbital Hall effect in spin-orbit torque MRAM
IntroductionData centers account for a substantial portion of global energy consumption, utilizing ~200 terawatt-hours annually, which represents currently 1% of the world’s energy use1,2. To reduce the power consumption in computers, Spin-Orbit Torque (SOT) Magnetic Random-Access Memory (MRAM) is gaining attention as a potential replacement for static RAM due to its possible enhanced power efficiency, non-volatility, and superior performance, making it an attractive option for cache memory appl...
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