Cross-sections of phase-change memory devices in the high- and low-resistance states. The diameter of the bottom electrode is ~40 nanometers. Arrows mark some of the van der Waals (vdW) interfaces, which form between layers of the superlattice materials. The superlattice is disrupted and reformed between the high- and low-resistance states. Credit: Courtesy of the Pop Lab We are tasking our computers with processing ever-increasing amounts of data to speed up drug discovery, improve weather and ...