High-quality lightly phosphorus-doped n-type diamond epilayer. Credit: Advanced Science (2024). DOI: 10.1002/advs.202306013 A National Institute for Materials Science (NIMS) research team has developed the world's first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary metal-oxide-semiconductor: one of the most popular technologies in the computer chip) integrated circuits for harsh ...