Negative Capacitance Breaks GaN Transistor Limits
Integrating an electronic material that exhibits a strange property called negative capacitance can help high-power gallium nitride transistors break through a performance barrier, say scientists in California. Research published in Science suggests that negative capacitance helps sidestep a physical limit that typically enforces trade-offs between how well a transistor performs in the “on” state versus how well it does in the “off” state. The researchers behind the project say this shows that n...
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